執(zhí)行器IC20-07Q2T芯科技，芯創(chuàng)新；74330324
減少排除堿金屬不良影響采用低硫、低堿的鐵礦石燒結(jié)，合理配礦，減少人爐堿負(fù)荷。適當(dāng)增加燒結(jié)礦中MgO的含量，提高燒結(jié)礦強(qiáng)度，高M(jìn)gO燒結(jié)礦的軟化開始溫度比高堿度燒結(jié)礦高70-140℃;并且軟化溫度區(qū)間窄，低溫還原粉化率低，有利于高爐改善透氣性。在燒結(jié)過程中加人CaC12對燒結(jié)礦進(jìn)行氯化脫堿。CaC12既有利于提高燒結(jié)礦強(qiáng)度，又能與堿金屬反應(yīng)生成KCl和NaCl而形成蒸汽隨燒結(jié)廢氣排出。
ALLEN BRADLEY觸摸屏 2711NL5
ALLEN BRADLEY觸摸屏 2711NL6
ALLEN BRADLEY觸摸屏 2711NL7
ALLEN BRADLEY觸摸屏 2711NL9
ALLEN BRADLEY觸摸屏 2711NM13
ALLEN BRADLEY觸摸屏 2711NM15
ALLEN BRADLEY觸摸屏 2711NM2
ALLEN BRADLEY觸摸屏 2711NM232
ALLEN BRADLEY觸摸屏 2711NR5K
ALLEN BRADLEY觸摸屏 2711NR7T
ALLEN BRADLEY觸摸屏 2711NV7K
ALLEN BRADLEY觸摸屏 2711NV7T
ALLEN BRADLEY觸摸屏 2711PB10C22A9P
ALLEN BRADLEY觸摸屏 2711PB10C22A9PB
ALLEN BRADLEY觸摸屏 2711PB10C22D9P
ALLEN BRADLEY觸摸屏 2711PB10C22D9PB
ALLEN BRADLEY觸摸屏 2711PB10C4A8
ALLEN BRADLEY觸摸屏 2711PB10C4A9
ALLEN BRADLEY觸摸屏 2711PB10C4D8
ALLEN BRADLEY觸摸屏 2711PB10C4D9
ALLEN BRADLEY觸摸屏 2711PB12C4A8
ALLEN BRADLEY觸摸屏 2711PB12C4A9
ALLEN BRADLEY觸摸屏 2711PB12C4D8
ALLEN BRADLEY觸摸屏 2711PB12C4D9
ALLEN BRADLEY觸摸屏 2711PB15C22A9P
ALLEN BRADLEY觸摸屏 2711PB15C22A9PB
ALLEN BRADLEY觸摸屏 2711PB15C22D9P
ALLEN BRADLEY觸摸屏 2711PB15C22D9PB
ALLEN BRADLEY觸摸屏 2711PB15C4A8
ALLEN BRADLEY觸摸屏 2711PB15C4A9
ALLEN BRADLEY觸摸屏 2711PB15C4D8
ALLEN BRADLEY觸摸屏 2711PB15C4D9
ALLEN BRADLEY觸摸屏 2711PB4C20A8
ALLEN BRADLEY觸摸屏 2711PB4C20D8
BALLUFF INDUCTIVE SENSOR RPTA 1803-PU-03 *NEW IN BAG*
BALLUFF PROXIMITY SENSOR BES516-3017 BES5163017 E4-C-PU 10-30 V DC 150mA
BALLUFF PROXIMITY SENSOR BES516-3017 BES5163017 E4-C-PU 10-30 V DC 150mA
Balluff Photoelectric Emitter BLS 65K-1-G50-1
Balluff BTL5-M-2814-1S Transducer BTL5M28141S
alluff BTL5-M-2814-1S Transducer BTL5M28141S
Balluff BCSM18KM3-PSC80G-S04G Cap Active 24Vdc Proximity Switch BCSM18KM3 - USED
Balluff BCSM18KM3-PSC80G-S04G Cap Active 24Vdc Proximity Switch BCSM18KM3 - USED
BALLUFF INDUKTIVSENSOR BES 516-370-G-ES-Y-S49 OVP
BALLUFF BES 516-324-G-E4-C-PU-03, INDUCTIVE SENSOR, SENSING RANGE: 2MM, #233488
1 NIB BALLUFF BLS-18K-XX-1J-B1-L2 BLS18KXX1JB1L2 PROXIMITY SWITCH
BALLUFF P/n BES M12EG1-PSC60Z-S04G-S11
Balluff BES 5-6-3008-G-E4-C-PU-05 1.5mm N.O. Inductive Proximity Sensor
BALLUFF BESM12MD1-NSC60B-S04G PROXIMITY SENSOR *NEW IN FACTORY BAG*
BALLUFF BOS 18M-WO-7RB-BO-L PHOTOELECTRIC SENSOR 20-50VAC 45-65HZ
BALLUFF M12 2MM PROXIMITY SENSOR, RXT-1202-PU1 *NEW*
BALLUFF M12 2MM PROXIMITY SENSOR, RXT-1202-PU1 *NEW*
BALLUFF BES 516-324-G-E4-C-S49-00,2 INDUCTIVE SENSOR 10-30VDC 200MA, NEW #165298
BALLUFF 779685, BNS 542-B02-D12-72-10-FD-L2, Positionsschalter - NEU
BALLUFF BES 516 343-G-E5-C-S49 BES00TY *NEW* PROXIMITY SWITCH 10-30V DC
Balluff BES-516-209-S21-E Sensors
R900414568 4 WEH 10 D2X/6AG110NZ5L
R900358832 4 WEH 10 D2X/6AG12NETD/5
R900368745 4 WEH 10 D2X/6AG12NETD/V/5
R900358435 4 WEH 10 D2X/6AG12NETZ4
R900388912 4 WEH 10 D2X/6AG12NETZ4/5
R900354240 4 WEH 10 D2X/6AG12NETZ4/B08
R900413035 4 WEH 10 D2X/6AG12NZ4
R900352457 4 WEH 10 D2X/6AG196NETZ5/B08
R900416922 4 WEH 10 D2X/6AG220NTSZ5L
R900409160 4 WEH 10 D2X/6AG220NZ5L
R900499329 4 WEH 10 D2X/6AG24ETSZ4
R900499805 4 WEH 10 D2X/6AG24ETZ4
R900379586 4 WEH 10 D2X/6AG24ETZ4 SO 388
R900391304 4 WEH 10 D2X/6AG24ETZ5L
R900340294 4 WEH 10 D2X/6AG24EZ4
R900341743 4 WEH 10 D2X/6AG24N9ES2Z4 SO 388
R900483957 4 WEH 10 D2X/6AG24N9ETK4
R900492630 4 WEH 10 D2X/6AG24N9ETK4/B08
R900357750 4 WEH 10 D2X/6AG24N9ETK4/T06
R900407723 4 WEH 10 D2X/6AG24N9ETS2K4
R900407724 4 WEH 10 D2X/6AG24N9ETS2K4 SO 388
R900361801 4 WEH 10 D2X/6AG24N9ETS2Z4
R900345018 4 WEH 10 D2X/6AG24N9ETZ4
R900387332 4 WEH 10 D2X/6AG24N9ETZ4/11
R900385199 4 WEH 10 D2X/6AG24N9ETZ4/B08
R900337664 4 WEH 10 D2X/6AG24N9ETZ5L
YT5粉末約束壓力和壓坯相對密度的聯(lián)系為：YF6粉末約束壓力和壓坯相對密度的聯(lián)系為Y=42.54+.732xX。從和式也能夠看出納米YF6粉末的壓坯密度比普通硬質(zhì)合金YT5粉末的壓坯密度低得多，而且跟著壓坯密度的添加，約束壓力急劇添加；反之，跟著約束壓力的添加YF6的壓坯密度添加緩慢。和式在約束壓力為（215）kN/cm2的規(guī)模內(nèi)合適的。從看，YT5和YF6的壓坯密度和約束壓力的聯(lián)系曲線很挨近，但因?yàn)閅F金理論密度較YT5合金理論密度高，從約束壓力和壓坯相對密度的聯(lián)系曲線能夠看出，兩種粉末的約束功能相差很大。
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